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| MITSUBISHI Nch POWER MOSFET FS40SM-6 HIGH-SPEED SWITCHING USE FS40SM-6 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS ................................................................................ 300V rDS (ON) (MAX) ............................................................ 0.114 ID .......................................................................................... 40A TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 300 30 40 120 275 -55 ~ +150 -55 ~ +150 4.8 Unit V V A A W C C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS40SM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 20A, VGS = 10V ID = 20A, VGS = 10V ID = 20A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 300 30 -- -- 2 -- -- 12.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.088 1.76 18.0 2850 580 110 45 125 310 140 1.5 -- Max. -- -- 10 1 4 0.114 2.28 -- -- -- -- -- -- -- -- 2.0 0.45 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 20A, VGS = 10V, RGEN = RGS = 50 IS = 20A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 300 MAXIMUM SAFE OPERATING AREA 3 2 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) 250 200 150 100 50 0 102 7 5 3 2 101 7 5 3 2 100 7 5 3 TC = 25C Single Pulse tw=10s 100s 1ms 10ms 100ms DC 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 50 10V TC = 25C 7V Pulse Test PD = 40 275W 6V 30 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 20 10V PD = 275W 6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 16 TC = 25C Pulse Test 5V 12 20 5V 8 4.5V 10 4V 0 0 10 20 30 40 50 4 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.10 0.08 0.06 0.04 0.02 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) TC = 25C Pulse Test VGS = 10V TC = 25C Pulse Test 8 ID = 60A 20V 6 4 40A 20A 2 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) 32 24 3 2 101 7 5 3 2 100 0 10 23 5 7 101 TC = 25C 75C 125C 16 8 0 0 4 8 12 16 20 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) Ciss td(off) 103 7 5 3 2 102 7 5 Coss 3 2 tf 102 7 5 3 2 101 100 23 tr td(on) Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 23 5 7 102 Crss 3 Tch = 25C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS40SM-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 VGS = 0V Pulse Test 25C 30 75C Tch = 25C ID = 40A 16 VDS = 50V 100V 200V 8 TC=125C 40 12 20 4 10 0 0 40 80 120 160 200 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 10-1 7 0.1 5 3 2 1.0 0.8 PDM tw T 0.6 0.4 -50 0 50 100 150 0.05 D= tw 0.02 T 0.01 Single Pulse 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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